Laminating system

ABSTRACT

It is an object of the invention to improve the production efficiency in sealing a thin film integrated circuit and to prevent the damage and break. Further, it is another object of the invention to prevent a thin film integrated circuit from being damaged in shipment and to make it easier to handle the thin film integrated circuit. The invention provides a laminating system in which rollers are used for supplying a substrate for sealing, receiving IC chips, separating, and sealing. The separation, sealing, and reception of a plurality of thin film integrated circuits can be carried out continuously by rotating the rollers; thus, the production efficiency can be extremely improved. Further, the thin film integrated circuits can be easily sealed since a pair of rollers opposite to each other is used.

TECHNICAL FIELD

The present invention relates to a laminating system which seals a thinfilm integrated circuit. The invention further relates to an IC sheetincluding a plurality of thin film integrated circuits which are sealed.The invention still further relates to a roll of a plurality of thinfilm integrated circuits which are sealed and wound. Moreover, theinvention relates to a method for manufacturing an IC chip in which athin film integrated circuit is sealed.

BACKGROUND ART

In recent years, a technology of an IC chip using a thin film integratedcircuit provided over a glass substrate (also referred to as IC tag, IDtag, RF (Radio Frequency) tag, wireless tag, or electronic tag) has beendeveloped. In such technology, a thin film integrated circuit providedover a glass substrate is required to be separated from the glasssubstrate, which is a supporting substrate, after the completion,Accordingly, as a technology for separating a thin film integratedcircuit which has been provided over a supporting substrate from thesupporting substrate; for example, there is a technology in which arelease layer containing silicon is provided between a thin filmintegrated circuit and a supporting substrate and the release layer isremoved with the use of a gas containing a halogen fluoride therebyseparating the thin film integrated circuit from the supportingsubstrate (Reference 1: Japanese Patent Laid-Open No. 8-254686).

A plurality of thin film integrated circuits are provided over a glasssubstrate, and the plurality of thin film integrated circuits areseparated individually while the release layer is removed. However, theproduction efficiency is low in the case of sealing the separated thinfilm integrated circuits individually. Further, a thin film integratedcircuit is thin and lightweight, so that it is difficult to seal thethin film integrated circuit without damage or break.

DISCLOSURE OF INVENTION

In view of the above problem, it is an object of the invention toimprove the production efficiency in sealing a thin film integratedcircuit and to prevent the damage and break.

Further, as described above, a thin film integrated circuit is brokenvery easily, and attention is required to handle it even after thesealing step, so that it has been very difficult to ship it withoutdamage and break.

Correspondingly, it is another object of the invention to prevent a thinfilm integrated circuit from being damaged in shipment and to make thethin film integrated circuit easier to handle.

The invention provides a laminating system in which rollers are used forsupplying a substrate for sealing, receiving IC chips, separating, andsealing. The separation, sealing, and reception of a plurality of thinfilm integrated circuits provided over a substrate can be carried outcontinuously by rotating the rollers; thus, the production efficiencycan be extremely improved. Further, the thin film integrated circuitscan be sealed easily since a pair of rollers opposite to each other isused.

A laminating system according to the invention comprises: a transfermeans for transferring a first substrate provided with at least one thinfilm integrated circuit; a first supplying roller on which a secondsubstrate winds; a peeling roller which separates the thin filmintegrated circuit from the first substrate by attaching a first surfaceof the thin film integrated circuit to the second substrate; a secondsupplying roller on which a third substrate to be attached to a secondsurface of the thin film integrated circuit winds; a laminating meanswhich seals the thin film integrated circuit between the secondsubstrate and the third substrate; and a receiving roller on which thesealed thin film integrated circuit winds, wherein the first surface andthe second surface of the thin film integrated circuit are opposed toeach other.

A laminating system according to the invention comprises: a firstsupplying roller on which a second substrate winds; a peeling rollerwhich separates at least one thin film integrated circuit provided overa first substrate from the first substrate by attaching a first surfaceof the thin film integrated circuit to the second substrate; a secondsupplying roller on which a third substrate to be attached to a secondsurface of the thin film integrated circuit winds; a laminating meanswhich seals the thin film integrated circuit between the secondsubstrate and the third substrate; and a receiving roller on which thesealed thin film integrated circuit winds, wherein the first surface andthe second surface of the thin film integrated circuit are opposed toeach other.

A laminating system according to the invention comprises: a transfermeans for transferring a first substrate provided with at least one thinfilm integrated circuit; a first supplying roller on which a secondsubstrate winds; a second supplying roller on which a third substratewinds; a laminating means which separates the thin film integratedcircuit from the first substrate by attaching a first surface of thethin film integrated circuit to the second substrate and seals the thinfilm integrated circuit between the second substrate and the thirdsubstrate; and a receiving roller on which the sealed thin filmintegrated circuit winds, wherein the first surface and the secondsurface of the thin film integrated circuit are opposed to each other.

A laminating system according to the invention comprises: a firstsubstrate having a surface provided with at least one thin filmintegrated circuit; a first supplying roller on which a second substratewinds; a fixing/moving means (also referred to as a first substratecontrol means) which fixes the first substrate so that the surface ofthe first substrate and the second substrate are opposed to each otherand moves the first substrate so that a first surface of the thin filmintegrated circuit is attached to the second substrate; a peeling meanswhich separates the thin film integrated circuit from the surface of thefirst substrate by attaching the first surface of the thin filmintegrated circuit to the second substrate; a second supplying roller onwhich a surface of a third substrate to be attached to a second surfaceof the thin film integrated circuit winds; a laminating means whichseals the thin film integrated circuit between the second substrate andthe third substrate; and a receiving roller on which the sealed thinfilm integrated circuit winds, wherein the first surface and the secondsurface of the thin film integrated circuit are opposed to each other.

In a laminating system having any one of the above structures thelaminating means comprises a first roller and a second roller which areopposed to each other. At least one of the first roller and the secondroller has a heating means. The laminating means seals the thin filmintegrated circuit by performing at least one of a pressure treatmentand a heat treatment while the thin film integrated circuit passesbetween the first roller and the second roller which are opposed to eachother.

Further, the second substrate and the third substrate comprise laminatefilms. The surface of the second substrate comprises an adhesivesurface. The surface of the third substrate comprises an adhesivesurface.

Still further, the invention provides an IC sheet which comprises atleast one sealed thin film integrated circuit that is made to have asheet like shape to be handled easily. An IC sheet according to theinvention has a plurality of thin film integrated circuits sealedbetween a second substrate and a third substrate.

Moreover, the invention provides a roll which comprises at least onesealed thin film integrated circuit that is wound to be handled easily.A roll according to the invention comprises a plurality of thin filmintegrated circuits which are sealed between a second substrate and athird substrate which are wound.

As to an IC sheet or a roll comprising the above structure, theplurality of thin film integrated circuits each has a thin filmtransistor and a conductive film which serve as an antenna. Theplurality of thin film integrated circuits are arranged regularly.Further, the second substrate and the third substrate comprise laminatefilms.

A method for manufacturing an IC chip according to the inventioncomprises the steps of: forming a release layer over a first substratehaving an insulating surface, forming at least one of thin filmintegrated circuit over the first substrate, forming an opening at aboundary of the thin film integrated circuit to expose a part of therelease layer, introducing a gas or a liquid containing a halogenfluoride into the opening to remove the release layer, attaching a firstsurface of the thin film integrated circuit to the second substrate toseparate the thin film integrated circuit from the first substrate,attaching a second surface of the thin film integrated circuit to thethird substrate, so that the thin film integrated circuit is sealedbetween the second substrate and the third substrate, wherein the firstsurface and the second surface of the thin film integrated circuit areopposed to each other.

In a laminating system according to the present invention in which aroller for supplying a substrate for sealing, a roller for winding thinfilm integrated circuits rollers for separating and sealing the thinfilm integrated circuits, the separation, sealing, and reception of theplurality of thin film integrated circuits provided over a substrate canbe carried out continuously; thus, the production efficiency can beimproved and the manufacturing time can be reduced.

Further, a laminating system according to the invention which seals thinfilm integrated circuits using a pair of rollers which is opposite toeach other as laminating means (also referred to as sealing means) caneasily seal the thin film integrated circuits.

As to an IC sheet and a roll according to the invention, since thin filmintegrated circuits have already been sealed; thus, they can be easilyhandled and the thin film integrated circuits are prevented from beingdamaged and broken. Further, a great amount of thin film integratedcircuits can be easily shipped.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a figure showing a laminating system according to theinvention.

FIG. 2 is a figure showing a laminating system according to theinvention.

FIG. 3 is a figure showing a laminating system according to theinvention.

FIG. 4 is a figure showing a laminating system according to theinvention.

FIGS. 5A and 5B are figures showing a method for manufacturing an ICchip.

FIGS. 6A and 6B are figures showing a method for manufacturing an ICchip.

FIGS. 7A and 7B are figures showing a method for manufacturing an ICchip.

FIG. 8 is a figure showing a method for manufacturing an IC chip.

FIG. 9 is a figure showing an IC chip.

FIGS. 10A to 10E are figures showing usage patterns of IC chips.

FIGS. 11A and 11B are figures showing usage patterns of IC chips.

FIGS. 12A and 12B are figures showing a roll according to the invention.

FIG. 13 is a figure showing an IC sheet according to the invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment modes and Embodiments of the invention will be described indetail with reference to the drawings. However, it is easily understoodby those skilled in may be art that the invention is not limited by thefollowing descriptions and various changes may be made in forms anddetails without departing from the spirit and the scope of theinvention. Therefore, the invention should not be limited bydescriptions of Embodiment Modes and Embodiments below. The samereference numerals are commonly given to the same components in theconstruction of the invention, which will be described below.

Embodiment Mode 1

The invention provides a laminating system in which rollers are used forsupplying a substrate for sealing, receiving IC chips, separating, andsealing. Major modes of the laminating system will be described withreference to the drawings.

A laminating system according to the invention comprises: a transfermeans 11 for transferring a first substrate 12 provided with a pluralityof thin film integrated circuits 13, a first supplying roller 14 onwhich a second substrate 18 winds, a peeling roller 16 which separatesthe thin film integrated circuits 13 from the first substrate 12, asecond supplying roller 15 on which a third substrate 19 winds, alaminating means 17 which seals the thin film integrated circuits 13between the second substrate 18 and the third substrate 19, and areceiving roller 20 on which the sealed thin film integrated circuits 13wind (FIG. 1).

In an apparatus shown in FIG. 1, thin film integrated circuits 13 overthe first substrate 12 which is transferred by a transfer means 11 isattached to the second substrate 18 which has traveled from the firstsupplying roller 14 toward the peeling roller 16 to separate the thinfilm integrated circuits 13 from the first substrate 12. The secondsubstrate 18 to which the thin film integrated circuits 13 are attachedtravels in the direction of the laminating means 17. The third substrate19 travels from the second supplying roller 15 toward the laminatingmeans 17. At the laminating means 17, either or both of a pressuretreatment and a beat treatment are carried out while the thin filmintegrated circuits 13 are attached to the third substrate 19. Finally,the thin film integrated circuits 13 which are sealed between the secondsubstrate 18 and the third substrate 19 travel in the direction of thereceiving roller 20 to be wound on the receiving roller 20.

In accordance with the above operations, in a laminating systemaccording to the invention, the peeling roller 16, the laminating means17, and the receiving roller 20 are provided so that the thin filmintegrated circuits 13 which is attached to the second substrate 18 andthe third substrate 19 pass them in order. The peeling roller 16 and thereceiving roller 20 rotate in directions different from each other. Thefirst supplying roller 14, the peeling roller 16, and a roller 21included in the laminating means 17 are provided so that the secondsubstrate 18 pass them in order. Further, the first supplying roller 14,the peeling roller 16, and the roller 21 rotate in the same direction.The second supplying roller 15 and a roller 22 included in thelaminating means 17 are provided so that the third substrate 19 passthem in order. The second supplying roller 15 and the roller 22 rotatein the same direction.

The transfer means 11 is for transferring the first substrate 12provided with a plurality of thin film integrated circuits 13. Forexample, the transfer means comprises a conveyer belt, a plurality ofrollers, and a robot arm. A robot arm transfers the first substrate 12itself or transfers a stage provided with the first substrate 12. Thetransfer means 11 transfers the first substrate 12 at a predeterminedspeed in accordance with a speed at which the first supplying roller 14rotates.

The second substrate 18 is wound on the first supplying roller 14, andthe third substrate 19 is wound on the second supplying roller 15. Thesecond substrate 18 is made travel toward the peeling roller 16 byrotating the first supplying roller 14 at a predetermined speed. Thethird substrate 19 is made travel toward the laminating means 17 byrotating the second supplying roller 15 at a predetermined speed. Thefirst supplying roller 14 and the second supplying roller 15 havecircular cylinder shape and are formed from a resin material, a metalmaterial, or the like.

The second substrate 18 and the third substrate 19 each correspond to alaminate film, a paper made of a fibrous material, or the like. Alaminate film may be made of a material such as polypropylene,polyester, vinyl, polyvinyl fluoride, polyvinyl chloride and the surfacemay be processed, for example, embossed.

The laminate film corresponding to the second substrate 18 and the thirdsubstrate 19 may be made of a material such as polyethylene and ethylenevinyl acetate. The surface may be coated with powders of silicon dioxide(silica). The coating keeps water resistance even under an atmosphere ofhigh temperature and high humidity.

Either or both of a surface of the second substrate 18 and the thirdsubstrate 19 may have adhesive surfaces The adhesive surface is coatedwith an adhesive such as a thermosetting resin, an ultraviolet curableresin, an epoxy based adhesive, or a resin additive.

Either or both of the second substrate 18 and the third substrate 19 mayhave light-transmitting properties. Further, either or both of thesecond substrate 18 and the third substrate 19 may be coated with aconductive material on the surfaces to protect the thin film integratedcircuit to be sealed by charging static electricity in either or both ofthe second substrate 18 and the third substrate 19.

Either or both of the second substrate 18 and the third substrate 19 maybe coated with a conductive material such as a thin film containingcarbon as a main component (a diamond-like carbon film) or indium tinoxide (ITO) as a protective film.

The peeling roller 16 is provided to attach a first surface of the thinfilm integrated circuits 13 to a surface of the second substrate 18 inorder to separate the thin film integrated circuits 13 from the firstsubstrate 12. When the peeling roller 16 rotates, the thin filmintegrated circuits 13 is attached to the second substrate 18; thus, thethin film integrated circuits 13 are separated from the first substrate12. Consequently, the peeling roller 16 is opposed to the side of thefirst substrate 12 where the thin film integrated circuits 13 areprovided.

According to the above structure, the first substrate 12 is moved by thetransfer means 11, and the peeling roller 16 is fixed, however, theinvention is not limited thereto. The first substrate 12 may be fixed,and the peeling roller 16 may be moved so that the thin film integratedcircuits 13 are separated from the first substrate 12. The peelingroller 16 has a circular cylinder shape and is formed from a resinmaterial, a metal material, or the like. Preferably, the peeling roller16 is formed of a soft material.

When the thin film integrated circuits 13 comprising a first surfacewhich is attached to the second substrate 18 reach the laminating means17, the laminating means 17 seals the thin film integrated circuits 13between the second substrate 18 and the third substrate 19 while makingthe third substrate 19 attach to a second surface of the thin filmintegrated circuits 13.

The laminating means 17 comprises the roller 21 and the roller 22 whichare opposed to each other. A second surface of the thin film integratedcircuits 13 are attached to the third substrate 19 traveling from thesecond supplying roller 15 toward the roller 22, and either or both of apressure treatment and a beat treatment are performed using the roller21 and the roller 22 while the third substrate 19 passes between theroller 21 and the roller 22. Through the above steps, the thin filmintegrated circuits 13 are sealed between the second substrate 18 andthe third substrate 19.

Either or both of the rollers 21 and 22 constituting the laminatingmeans 17 include heating means. The heating means, for example,corresponds to a heating medium such as a heating wire or oil. In thecase where a heat treatment is not carried out by the rollers 21 and 22,the rollers 21 and 22 may not necessarily have a heating means.

The rollers 21 and 22 rotate at a predetermined speed in accordance withthe speed at which the peeling roller 16 and the second supplying roller15 rotate. The rollers 21 and 22 have circular cylinder shape, and areformed from a resin material, a metal material, or the like, preferably,from a soft material.

The receiving roller 20 is a roller which receives the thin filmintegrated circuits 13 which are sealed by the second substrate 18 andthe third substrate 19 by winding them. The receiving roller 20 rotatesat a predetermined speed in accordance with the speed at which therollers 21 and 22 rotate. The receiving roller 20 have circular cylindershape, and are formed from a resin material, a metal material, or thelike, preferably, from a soft material.

Using a system according to the invention, the first supplying roller14, the second supplying roller 15, the peeling roller 16, the rollers21 and 22, and the receiving roller 20 rotate; thus, the plurality ofthin film integrated circuits 13 over the first substrate 12 can bepeeled, sealed, and received in sequence. Therefore, a system accordingto the invention can provide high productivity and manufacturingefficiency.

Next, a laminating system having a structure different from the abovelaminating system will be described with reference to FIG. 2.

A laminating system according to the invention includes a transfer means11 for transferring a first substrate 12 provided with a plurality ofthin film integrated circuits 13, a first supplying roller 14 on which asecond substrate 18 winds, a second supplying roller 15 on which a thirdsubstrate 19 winds, a laminating means 17 which separates the thin filmintegrated circuits 13 from the first substrate 12 and seals the thinfilm integrated circuits 13 with the second substrate 18 and the thirdsubstrate 19, and a receiving roller 20 on which the plurality of sealedthin film integrated circuits 13 wind (FIG. 2)

Such a structure has a feature that a roller 32 which is opposed to thepeeling roller 16 is provided and a laminating means 37 is constitutedby the peeling roller 16 and the roller 32. In other words, the peelingroller 16 also serves as a laminating means 37. Either or both of thepeeling roller 16 and the roller 32 have heating means.

In a system shown in FIG. 2, a first surface of the thin film integratedcircuits 13 is attached to the second substrate 18 by the peeling roller16 to separate the thin film integrated circuits 13 from the firstsubstrate 12 while a second surface of the thin film integrated circuits13 is attached to the third substrate 19 by the roller 32. Further,while the thin film integrated circuits 13 passes between the peelingroller 16 and the roller 32, the thin film integrated circuits 13 aresealed between the second substrate 18 and the third substrate 19 byperforming either or both of a pressure treatment and a heat treatment.

Accordingly, in the laminating system according to the invention, thelaminating means 37 including the peeling roller 16, and the receivingroller 20 are provided so that the thin film integrated circuits 13which are attached to the second substrate 18 and the third substrate 19pass them in order. The peeling roller 16 and the receiving roller 20rotate in different directions from each other. The first supplyingroller 14 and the peeling roller 16 included in the laminating means 37are provided so that the second substrate 18 passes them in order. Thefirst supplying roller 14 and the peeling roller 16 rotate in the samedirection. The second supplying roller 15 and the roller 32 included inthe laminating means 37 are provided so that the third substrate 19passes them in order. The second supplying roller 15 and the roller 32rotate in the same direction.

Using a system according to the invention, the first supplying roller14, the second supplying roller 15, the peeling roller 16, the roller32, and the receiving roller 20 rotate; thus, the plurality of thin filmintegrated circuits 13 over the first substrate 12 can be peeled,sealed, and received in sequence. Therefore, a system according to theinvention can provide high productivity and manufacturing efficiency.

Next, a laminating system having a structure different from the abovelaminating system will be described with reference to FIG. 3.

A laminating system according to the invention includes a fixing/movingmeans (also referred to as a first substrate control means) 33 whichfixes and moves the first substrate 12, a peeling means 36 whichseparates the thin film integrated circuits 13 from a surface of thefirst substrate 12, a first supplying roller 14 on which a secondsubstrate 18 winds, a second supplying roller 15 on which a thirdsubstrate 19 winds, a laminating means 17 which seals the thin filmintegrated circuits 13 with the second substrate 18 and the thirdsubstrate 19, and a receiving roller 20 on which the sealed thin filmintegrated circuits 13 wind (FIG. 3). Further, transfer means 34 and 35are included in addition to the above components. The structure shown inFIG. 3 has an upside-down structure of the structure shown in FIG. 1 andis newly provided with a fixing/moving means 33 and the transfer means34 and 35.

In this system, the thin film integrated circuits 13 over the firstsubstrate 12 moved by the fixing/moving means 33 are attached to thesecond substrate 18 which has traveled from the first supplying roller14 toward the transfer means 34. The thin film integrated circuits 13are separated from the first substrate 12 by the peeling means 36included in the transfer means 34. Further, the second substrate 18, towhich the thin film integrated circuits 13 are attached, travels towardthe laminating means 17. The third substrate 19 travels from the secondsupplying roller 15 toward the laminating means 17. At the laminatingmeans 17, either or both of a pressure treatment and a heat treatmentare performed while the thin film integrated circuits 13 are attached tothe third substrate 19. Finally, the thin film integrated circuits 13which are sealed between the second substrate 18 and the third substrate19 travel toward the receiving roller 20 to wind on the receiving roller20.

Accordingly, in the laminating system according to the invention, thepeeling means 36, the roller 21 included in the laminating means 17, thereceiving roller 20 are provided so that the thin film integratedcircuits 13 attached to the second substrate 18 and the third substrate19 pass them in order. The peeling means 36 and the receiving roller 20rotate in different directions from each other. The first supplyingroller 14, the transfer means 34, and the roller 21 included in thelaminating means 17 are provided so that the second substrate 18 passesthem in order. The first supplying roller 14 and the roller 21 rotate inthe same direction. The second supplying roller 15 and the roller 22included in the laminating means 17 are provided so that the thirdsubstrate 19 pass them in order. The second supplying roller 15 and theroller 22 rotate in the same direction.

The fixing/moving means 33 has a function of fixing the first substrate20 so that a surface of the first substrate 12 where the thin filmintegrated circuits 13 are provided (hereinafter referred to as a firstsurface of the first substrate 12) is opposed to the second substrate 18and a function of moving the first substrate 12 so that the thin filmintegrated circuits 13 over the first surface of the first substrate 12are attached to the second substrate 18. The first substrate 12 is movedby a vacuum adsorption method or the like. The first substrate 12 ismoved by moving the fixing/moving means 33.

The fixing/moving means 33 may be one which processes the firstsubstrate 12 one by one as shown in the figure, and may have a shape ofa polyhedron such as a circular cylinder or a prism. In the case ofusing one with the shape of a circular cylinder or a prism, the firstsubstrate 12 is fixed to the side surface thereof and the firstsubstrate 12 is moved by rotating the circular cylinder or a prism.

The transfer means 34 transfers the second substrate 18 and the firstsubstrate 12 provided with the plurality of thin film integratedcircuits 13. The peeling means 36 disposed on an end of the transfermeans 34 attaches the first surface of the thin film integrated circuits13 to the second substrate 18 to separate the thin film integratedcircuits 13 from the first surface of the first substrate 12. In thestructure shown in the figure, the peeling means 36 corresponds to aroller. The transfer means 35 transfers the first substrate 12 fromwhich the thin film integrated circuits 13 are peeled.

After the thin film integrated circuits 13 are separated from the firstsubstrate 12, the third substrate 19 is attached to a second surface ofthe thin film integrated circuits 13 which is opposed to the firstsurface of the thin film integrated circuits by the laminating means 17while the thin film integrated circuits 13 are sealed between the secondsubstrate 18 and the third substrate 19 as with the structure of thelaminating system in FIG. 1. Subsequently, the thin film integratedcircuits 13 are received by the receiving roller 20.

Using a system according to the invention, the transfer means 34 and 35,the first supplying roller 14, the second supplying roller 15, therollers 21 and 22, and the receiving roller 20 rotate; thus, theplurality of thin film integrated circuits 13 over the first substrate12 can be peeled, sealed, and received in sequence. Therefore, a systemaccording to the invention can provide high productivity andmanufacturing efficiency.

Next, a general structure of a laminating system will be described withreference to FIG. 4. Here, a general structure of a laminating systemhaving a structure shown in FIG. 1 will be described.

A cassette 23 is a cassette for supplying a substrate, and a firstsubstrate 12 provided with a plurality of thin film integrated circuits13 are set therein. A cassette 24 is a cassette for receiving asubstrate, and the first substrate 12 is to be set therein. A pluralityof rollers 25 to 27 are provided as transfer means between the cassette23 and the cassette 24. The first substrate 12 is transferred when therollers 25 to 27 rotate. Thereafter, the thin film integrated circuits13 are peeled and sealed, and the sealed thin film integrated circuits13 are cut by a cutting means 28. The cutting means 28 may use a dicingsystem, a scribing system, a laser irradiation apparatus (particularly,a CO₂ laser irradiation apparatus) or the like. The sealed thin filmintegrated circuits 13 are completed through the above steps.

In the structures shown in FIGS. 1 to 4, the thin film integratedcircuits 13 provide over the first substrate 12 include an element groupof a plurality of elements and a conductive layer serving as an antenna.However, the invention is not limited thereto.

The thin film integrated circuits 13 provided over the first substrate12 may only include an element group. A conductive layer serving as anantenna is attached to the second substrate 18 or the third substrate19, and a plurality of elements included in the thin film integratedcircuits 13 may be connected to the conductive layer in attaching thethin film integrated circuits 13 to the second substrate 18 or the thirdsubstrate 19.

Embodiment Mode 2

A structure of an IC sheet (also referred to as an IC film, a sheetelement, and a film element) according to the invention will bedescribed. An IC sheet according to the invention is a second substrate18 and a third substrate 19 which are attached to each of a plurality ofthin film integrated circuits 13 from both surfaces which are wound in aroller shape (see cross-sectional view of an IC sheet in FIG. 13). Eachof the plurality of thin film integrated circuits 13 has a plurality ofelements and a conductive layer serving as an antenna Each of theplurality of thin film integrated circuits 13 are arranged regularly.

As described above, sheet-like IC sheets comprising a plurality of thinfilm integrated circuits 13 sealed with a pair of substrates for sealingare easy to be shipped. In particular, it is advantageous in theshipment of a large amount of thin film integrated circuits 13. Further,the plurality of thin film integrated circuits 13 are difficult to behandled when each of them are divided; however, an IC sheet provided bythe invention has a sheet shape, so that it is easy to handle and thebreak and damage of the thin film integrated circuits 13 can beprevented.

Embodiment Mode 3

A structure of a roll (also referred to as wound element, roll body orthe like) according to the invention will be described. A roll accordingto the invention winds a substrate, more specifically, a secondsubstrate 18 and a third substrate 19 which seal each of a plurality ofthin film integrated circuits 13 are wound in a roll shape (see across-sectional view of a roll in FIG. 12A and a perspective view of aroll in FIG. 12B). Each of the plurality of thin film integratedcircuits 13 has a plurality of elements and a conductive film as anantenna. The plurality of thin film integrated circuits 13 are arrangedregularly.

As described above, a roll which is a plurality of thin film integratedcircuits 13 sealed with a pair of substrates are wound can easily beshipped. In particular, it is advantageous in the shipment of a largeamount of thin film integrated circuits 13. Further, the plurality ofthin film integrated circuits 13 are difficult to be handled when eachof them are divided; however, a roll provided by the invention is wound,so that it is easy to handle and the break and damage of the thin filmintegrated circuits 13 can be prevented.

Embodiment Mode 4

A method for manufacturing an IC chip according to the invention will bedescribed with reference to the drawings.

First, release layers 101 to 103 are formed over a first substrate 100having an insulating surface (FIG. 5A). The first substrate 100 havingan insulating surface corresponds to a glass substrate, a quartzsubstrate, a plastic substrate, a resin substrate formed of a flexiblesynthetic resin such as acrylic, a metal substrate, or a siliconsubstrate. Note that in the case where a silicon substrate is used, arelease layer is not required to be provided.

The release layers 101 to 103 are layers containing silicon which areformed by sputtering, plasma CVD, or the like. A layer containingsilicon corresponds to an amorphous semiconductor layer, a semiamorphoussemiconductor layer in which an amorphous state and a crystalline stateare mixed, or a crystalline semiconductor layer.

The release layers 101 to 103 are each formed of a layer of an elementselected from tungsten (W), molybdenum (Mo), titanium (Ti), tantalum(Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn),ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir),and silicon (Si), an alloy material or a compound material containingthe element as a main component which is formed by a known method (suchas sputtering or plasma CVD). The release layers each may have a singlelayer structure or a layered structure.

The release layers 101 to 103 are formed selectively over the firstsubstrate 100. A top view thereof is shown in FIG. 8. FIGS. 5A and 5Beach show a cross-sectional view taken along line A-B in FIG. 8. Suchselective formation is carried out in order to prevent dispersion of aplurality of thin film integrated circuits 112, 118, and 119 providedover the release layers 101 to 103 after removing the release layers 101to 103.

Next, a base insulating film 104 is formed over the release layer 101 to103. Subsequently, an element group 105 is formed over the insulatinglayer 104. The element group 105 includes a thin film transistor; acapacitor, a resistor, a diode or a plurality of the respectiveelements. Next, an insulating film 108 is formed to cover the elementgroup 105 and an insulating film 109 is formed over the insulating film108. A conductive layer 110 serving as an antenna is formed over theinsulating film 109. Further, an insulating film 111 serving as aprotective film is formed over the conductive layer 110. Through theabove steps, the thin film integrated circuits 112, 118, and 119comprising the element group 105 and the conductive layer 110 arecompleted.

The insulating films 108, 109, and 111 are formed from an organicmaterial or an inorganic material. Polyimide, acrylic, polyamide,siloxane, epoxy, or the like can be used as an organic material.Siloxane includes a skeleton formed from a bond of silicon (Si) andoxygen (O), and an organic group containing hydrogen (for example, analkyl group or an aromatic hydrocarbon), a fluoro group or an organicgroup containing hydrogen and a fluoro group is used for a substituent.Silicon oxide, silicon nitride, silicon oxynitride, silicon nitrideoxide, or the like is used for an inorganic material.

In stead of selectively forming the release layers 101 to 103, theinsulating film 111 may have thick thickness for preventing the thinfilm integrated circuits 112, 118, and 119 from scattering. When thethickness of the insulating film 111 is thicker than normal, the thinfilm integrated circuits 112, 118, and 119 can be prevented fromscattering, owing to the weight of the insulating film 111.

Next, openings 114 to 117 are respectively formed between the thin filmintegrated circuits 112, 118, and 119 so as to expose the release layers101 to 103 (FIG. 5B). The openings 114 to 117 are formed by etchingusing a mask, dicing or the like.

Subsequently, an etchant for removing the release layers 101 to 103 isintroduced into the openings 114 to 117 to make them gradually recede,thereby removing the release layers 101 to 103 (FIG. 6A). A gas or aliquid containing halogen fluoride is used as the etchant. For example,chlorine trifluoride (ClF₃) is used as a halogen fluoride.

Alternatively, nitrogen trifluoride (NT₃), bromine trifluoride (BrF₃),or hydrogen fluoride (HF) may be used as a halogen fluoride. Note thathydrogen fluoride is used in the case of forming a layer containingsilicon as a release layer.

Further, as described above, since the release layers 101 to 103 areselectively formed here; thus, a part of the insulating film 104 is incontact with the first substrate 100 after removing the release layers101 to 103. Therefore, the thin film integrated circuits 112, 118, and119 can be prevented from scattering.

Next a first surface of each of the thin film integrated circuit 112,118, and 119 is attached to a second substrate 121. Correspondingly, thethin film integrated circuits 112, 118, and 119 are separated from thefirst substrate 100.

In the above steps, a part of the insulating film 104 remains over thefirst substrate 100; however, the invention is not limited thereto. Inthe case where the adhesion between the first substrate 100 and theinsulating film 104 is low, the insulating film 104 would completelyseparated from the first substrate 100 by carrying out the above steps.

Next, a second surface of the thin film integrated circuits 112, 118,and 119 are attached to a third substrate 122 and the thin filmintegrated circuits 112, 118, and 119 are sealed between the secondsubstrate 121 and the third substrate 122 (FIG. 6B). Thus, the thin filmintegrated circuits 112, 118, and 119 are sealed with the secondsubstrate 121 and the third substrate 122.

A part of each of the second substrate 121 and the third substrate 122between the respective thin film integrated circuits 112, 118, and 119is cut by dicing, scribing, or laser cutting. Thus, a sealed IC chip iscompleted (FIGS. 7A and 713).

An IC chip sealed through the above steps has the size of 5 mm square(25 mm²) or less, preferably, 0.3 mm square (0.09 mm²) to 4 mm square(16 mm²).

Since a thin film integrated circuit formed over an insulating substrateis used for an IC chip according to the invention without using asilicon substrate; therefore, the IC chip has less limitations in theshape of the mother substrate compared with a chip formed from acircular silicon wafer. That increases the productivity of IC chips andmakes it possible to mass-produce the IC ships. Consequently, cost of ICchips can be reduced. Further, a semiconductor film with a thickness of0.2 μm or less, typically, 40 nm to 170 nm, preferably, 50 nm to 150 nmis used for an IC chip according to the invention; thus, the IC chipsare very thin compared with a chip formed from a silicon substrate. As aresult, the presence of a thin film integrated circuit is hardly noticedeven when it is applied to an article, which leads to protection againstfalsification Further, an IC chip according to the invention can receivesignals with high sensitivity without electromagnetic wave absorptioncompared with an IC chip formed from a silicon substrate. In the casewhere a silicon substrate is not used, the thin film integrated circuitcan have light-transmitting properties. Therefore, the IC chip accordingto the invention can be applied to various articles, for example, it canbe mounted on a printed surface without spoiling the design. Thisembodiment mode can be freely combined with any one of the aboveembodiment modes.

Embodiment 1

An IC chip formed with the use of a laminating system according to theinvention includes a plurality of elements, and a conductive layerserving as an antenna. The plurality of elements correspond to a thinfilm transistor, a capacitor, a resistor, and a diode, for example.

An IC chip 210 has a function of communicating data without contact, andconstitutes a variety of circuits. For example, a power circuit 211, aclock generator circuit 212, a data demodulation/modulation circuit 213,a control circuit 214 (corresponding to a CPU or an MPU, for example),an interface circuit 215, a memory 216, a data bus 217, an antenna (alsoreferred to as an antenna coil) 218, and the like are provided (FIG. 9).

The power circuit 211 is a circuit which generates a variety of powersource which is to be supplied to the above respective circuits based onan AC signal inputted from the antenna 218. The clock generator circuit212 is a circuit for generating various clocks to be supplied to theabove respective circuits based on an AC signal inputted from theantenna 218. The demodulation/modulation circuit 213 has a function ofdemodulating/modulating data in communication with a reader/writer 219.The control means 214, for example, corresponds to a central processingunit (CPU), a micro processor unit (MPU), or the like and has a functionof controlling other circuits. The antenna 218 has a function oftransmitting and receiving electromagnetic wave. The reader/writer 219controls processes regarding communication with a thin film integratedcircuit, control of the thin film integrated circuit, and data of thethin film integrated circuit.

The structure of a circuit constituted by thin film integrated circuitsis not limited to the above structure. For example, a structure withanother component such as a limiter circuit for source voltage or ahardware dedicated for cryptographic processing may be used.

Embodiment 2

An IC chip manufactured using a laminating system according to theinvention is in wide use. For example, IC chips 210 can be used in papermoney, coin, securities, bearer bonds, a certificate (such as a driver'slicense, a resident's card (FIG. 10A)), a packing case (such as awrapper, or a bottle (FIG. 10B)), a storage medium (such as a DVD, avideo tape (FIG. 10C)), a vehicle (such as a bicycle (FIG. 10D)),belongings (such as a bag, glasses (FIG. 10E)), food, clothing,commodities, and electronics. Electronics include a liquid crystaldisplay device, an EL display device, a television device (also referredto as TV or a television receiver), and a cellular phone.

An IC chip is fixed to an article by attaching it onto the surface ofthe article, embedding it in the article, or the like. For example, anIC chip may be embedded in paper of a book, or in an organic resin of apackage formed of an organic resin. Paper money, coin, securities,bearer bonds, a certificate, or the like may be provided with an ICchip, so that forgery can be prevented. Further, a packing case, astorage medium, belongings, foods, commodities, and electronics may beprovided with IC chips, so that efficiency of an inspection system, asystem for a rental shop, or the like can be improved. Vehicles may beprovided with IC chips, so that forgery or robbery can be prevented.

Further, IC chips may be applied to a system of commodity management andcommodity distribution, so that the functionality of the system can beimproved. For example, a side surface of a portable terminal including adisplay area 294 is provided with a reader/writer 295, and a sidesurface of an article 297 is provided with an IC chip 296 (FIG. 11A). Inthis case, when the IC chip 296 is held to the reader/writer 295,information of the article 297 such as the raw materials, the place oforigin, the history of distribution, or the like are displayed on thedisplay area 294. As an alternative, a reader/writer 305 can be providedat the side of a conveyer belt (FIG. 11). In this case, an article 397can be easily checked using an IC chip 306 provided on a side surface ofthe article 397.

EXPLANATION OF REFERENCE

11: a transfer means, 12: a first substrate, 13: a thin film integratedcircuit, 14: a first supplying roller, 15: a second supplying roller,16: a peeling roller, 17: a laminating means, 18: a second substrate,19: a third substrate, 20: a receiving roller, 21: a roller, 22: aroller, 23: cassette, 24: cassette, 25: a roller, 26: a roller, 27: aroller, 28: cutting means, 32: a roller, 33: a fixing moving means, 34:a transfer means, 35: a transfer means, 36: a peeling means, 37:laminating means, 100: a first substrate, 101: release layer, 102:release layer, 103: release layer, 104: an insulating film, 105: anelement group, 108: an insulating film, 109: an insulating film 110:conductive layer, 111: an insulating film, 112: a thin film integratedcircuit, 114: an opening, 115: an opening, 116: an opening, 117: anopening, 118: a thin film integrated circuit, 119: a thin filmintegrated circuit, 121: a second substrate, 122: a third substrate,210: an IC chip, 211: a power circuit, 212: a clock generator circuit,213: a data recovery/modulation circuit, 214: a control circuit, 215: aninterface circuit, 216: a memory, 217: data bus, 218: an antenna, 219: areader/writer, 294: a display area, 295: a reader/writer, 296: an ICchip, 297: an article, 305: a reader/writer, 307: an IC chip, 397: anarticle

1. A semiconductor device comprising: a thin film integrated circuitdisposed between a first substrate and a second substrate, the thin filmintegrated circuit comprising: a base insulating film; a thin filmtransistor over the base insulating film; a conductive layer over thethin film transistor; and an insulating film over the thin filmtransistor; wherein the thin film integrated circuit is sealed with thefirst and the second substrate and the first substrate is in contactwith the second substrate at a region outside the thin film integratedcircuit.
 2. A semiconductor device comprising: a thin film integratedcircuit disposed between a first substrate and a second substrate, thethin film integrated circuit comprising: a base insulating film; a thinfilm transistor over the base insulating film; a conductive layer overthe thin film transistor; and an insulating film over the thin filmtransistor; wherein the thin film integrated circuit is sealed with thefirst and the second substrate and the first substrate is in contactwith the second substrate at an edge portion of the first substrate andthe second substrate.
 3. A semiconductor device comprising: a thin filmintegrated circuit disposed between a first substrate and a secondsubstrate, the thin film integrated circuit comprising: a baseinsulating film; a thin film transistor over the base insulating film; aconductive layer over the thin film transistor; and an insulating filmover the thin film transistor; wherein the thin film integrated circuitis sealed with the first and the second substrate and the firstsubstrate is in contact with the second substrate at a region outsidethe thin film integrated circuit, wherein either or both of the firstsubstrate and the second substrate are coated with a conductivematerial.
 4. A semiconductor device comprising: a thin film integratedcircuit disposed between a first substrate and a second substrate, thethin film integrated circuit comprising: a base insulating film; a thinfilm transistor over the base insulating film; a conductive layer overthe thin film transistor; and an insulating film over the thin filmtransistor; wherein the thin film integrated circuit is sealed with thefirst and the second substrate and the first substrate is in contactwith the second substrate at an edge portion of the first substrate andthe second substrate, wherein either or both of the first substrate andthe second substrate are coated with a conductive material.
 5. Asemiconductor device comprising: a thin film integrated circuit disposedbetween a first substrate and a second substrate, the thin filmintegrated circuit comprising: a base insulating film; an element groupincluding a thin film transistor and a capacitor, over the baseinsulating film; a first insulating film covering the element group; afirst conductive layer electrically connected to the element group, overthe first insulating film; and a second insulating film over the firstconductive layer; and a second conductive layer attaching to the firstsubstrate or the second substrate, wherein the thin film integratedcircuit is sealed with the first and the second substrate and the firstsubstrate is in contact with the second substrate at a region outsidethe thin film integrated circuit, and wherein the second conductivelayer is an antenna and electrically connected to the first conductivelayer.
 6. A semiconductor device comprising: a thin film integratedcircuit disposed between a first substrate and a second substrate, thethin film integrated circuit comprising: a base insulating film; anelement group including a thin film transistor and a capacitor, over thebase insulating film; a first insulating film covering the elementgroup; a first conductive layer electrically connected to the elementgroup, over the first insulating film; and a second insulating film overthe first conductive layer; and a second conductive layer attaching tothe first substrate or the second substrate, wherein the thin filmintegrated circuit is sealed with the first and the second substrate andthe first substrate is in contact with the second substrate at an edgeportion of the first substrate and the second substrate, and wherein thesecond conductive layer is an antenna and electrically connected to thefirst conductive layer.
 7. The semiconductor device according to claim1, wherein the insulating film includes a material selected from thegroup consisting of silicon oxide, silicon nitride, silicon oxynitride,and silicon nitride oxide.
 8. The semiconductor device according toclaim 2, wherein the insulating film includes a material selected fromthe group consisting of silicon oxide, silicon nitride, siliconoxynitride, and silicon nitride oxide.
 9. The semiconductor deviceaccording to claim 3, wherein the insulating film includes a materialselected from the group consisting of silicon oxide, silicon nitride,silicon oxynitride, and silicon nitride oxide.
 10. The semiconductordevice according to claim 4, wherein the insulating film includes amaterial selected from the group consisting of silicon oxide, siliconnitride, silicon oxynitride, and silicon nitride oxide.
 11. Thesemiconductor device according to claim 5, wherein the second insulatingfilm includes a material selected from the group consisting of siliconoxide, silicon nitride, silicon oxynitride, and silicon nitride oxide.12. The semiconductor device according to claim 6, wherein the secondinsulating film includes a material selected from the group consistingof silicon oxide, silicon nitride, silicon oxynitride, and siliconnitride oxide.
 13. The semiconductor device according to claim 1,wherein each of the first substrate and the second substrate comprises aresin.
 14. The semiconductor device according to claim 2, wherein eachof the first substrate and the second substrate comprises a resin. 15.The semiconductor device according to claim 3, wherein each of the firstsubstrate and the second substrate comprises a resin.
 16. Thesemiconductor device according to claim 4, wherein each of the firstsubstrate and the second substrate comprises a resin.
 17. Thesemiconductor device according to claim 5, wherein each of the firstsubstrate and the second substrate comprises a resin.
 18. Thesemiconductor device according to claim 6, wherein each of the firstsubstrate and the second substrate comprises a resin.
 19. Thesemiconductor device according to claim 1, wherein each of the firstsubstrate and the second substrate includes a laminate film or a papermade of a fibrous material
 20. The semiconductor device according toclaim 2, wherein each of the first substrate and the second substrateincludes a laminate film or a paper made of a fibrous material.
 21. Thesemiconductor device according to claim 3, wherein each of the firstsubstrate and the second substrate includes a laminate film or a papermade of a fibrous material.
 22. The semiconductor device according toclaim 4, wherein each of the first substrate and the second substrateincludes a laminate film or a paper made of a fibrous material.
 23. Thesemiconductor device according to claim 5, wherein each of the firstsubstrate and the second substrate includes a laminate film or a papermade of a fibrous material.
 24. The semiconductor device according toclaim 6, wherein each of the first substrate and the second substrateincludes a laminate film or a paper made of a fibrous material.
 25. Thesemiconductor device according to claim 1, wherein the conductive layeris an antenna.
 26. The semiconductor device according to claim 2,wherein the conductive layer is an antenna.
 27. The semiconductor deviceaccording to claim 3, wherein the conductive layer is an antenna. 28.The semiconductor device according to claim 4, wherein the conductivelayer is an antenna.
 29. The semiconductor device according to claim 5,wherein either or both of the first substrate and the second substrateare coated with a conductive material.
 30. The semiconductor deviceaccording to claim 6, wherein either or both of the first substrate andthe second substrate are coated with a conductive material.
 31. A methodcomprising the steps of: forming thin film integrated circuits over afirst substrate, each of the thin film integrated circuits comprising athin film transistor; attaching the first substrate to a secondsubstrate with the thin film integrated circuits interposedtherebetween; separating the thin film integrated circuits from thefirst substrate; attaching the second substrate to a third substrate sothat the thin film integrated circuits are sealed between the secondsubstrate and the third substrate; and cutting the second substrate andthe third substrate by laser into a plurality of chips, each includingat least one of the thin film integrated circuits.
 32. A methodcomprising the steps of: forming thin film integrated circuits over afirst substrate, each of the thin film integrated circuits comprising athin film transistor and an antenna; attaching the first substrate to asecond substrate with the thin film integrated circuits interposedtherebetween; separating the thin film integrated circuits from thefirst substrate; attaching the second substrate to a third substrate sothat the thin film integrated circuits are sealed between the secondsubstrate and the third substrate; and cutting the second substrate andthe third substrate by laser into a plurality of chips, each includingat least one of the thin film integrated circuits.
 33. A methodcomprising the steps of: forming thin film integrated circuits eachcomprising a thin film transistor and an antenna; disposing the thinfilm integrated circuits between a pair of substrates so that the thinfilm integrated circuits are sealed between the pair of substrates; andcutting the pair of substrates by laser into a plurality of chips, eachincluding at least one of the thin film integrated circuits.
 34. Amethod comprising the steps of: forming thin film integrated circuitsover a first substrate, each of the thin film integrated circuitscomprising a thin film transistor; attaching the first substrate to asecond substrate with the thin film integrated circuits interposedtherebetween; separating the thin film integrated circuits from thefirst substrate; attaching the second substrate to a third substrate sothat the thin film integrated circuits are sealed between the secondsubstrate and the third substrate; and cutting the second substrate andthe third substrate by laser into a plurality of chips, each includingat least one of the thin film integrated circuits, wherein at least oneof the second substrate and the third substrate is coated with aconductive material.
 35. A method comprising the steps of: forming thinfilm integrated circuits over a first substrate, each of the thin filmintegrated circuits comprising a thin film transistor and an antenna;attaching the first substrate to a second substrate with the thin filmintegrated circuits interposed therebetween; separating the thin filmintegrated circuits from the first substrate; attaching the secondsubstrate to a third substrate so that the thin film integrated circuitsare sealed between the second substrate and the third substrate; andcutting the second substrate and the third substrate by laser into aplurality of chips, each including at least one of the thin filmintegrated circuits, wherein at least one of the second substrate andthe third substrate is coated with a conductive material.
 36. A methodcomprising the steps of: forming thin film integrated circuits eachcomprising a thin film transistor and an antenna; disposing the thinfilm integrated circuits between a pair of substrates so that the thinfilm integrated circuits are sealed between the pair of substrates; andcutting the pair of substrates by laser into a plurality of chips, eachincluding at least one of the thin film integrated circuits, wherein atleast one of the pair of substrates is coated with a conductivematerial.
 37. The method according to claim 31, wherein each of thesecond substrate and the third substrate comprises a laminate film or apaper made of a fibrous material.
 38. The method according to claim 32,wherein each of the second substrate and the third substrate comprises alaminate film or a paper made of a fibrous material.
 39. The methodaccording to claim 34, wherein each of the second substrate and thethird substrate comprises a laminate film or a paper made of a fibrousmaterial.
 40. The method according to claim 35, wherein each of thesecond substrate and the third substrate comprises a laminate film or apaper made of a fibrous material.
 41. The method according to claim 33,wherein each of the pair of substrates comprises a laminate film or apaper made of a fibrous material.
 42. The method according to claim 36,wherein each of the pair of substrates comprises a laminate film or apaper made of a fibrous material.
 43. The method according to claim 31,wherein each of the second substrate and the third substrate comprisesat least one selected from the group consisting of polypropylene,polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, polyethylene,and ethylene vinyl acetate.
 44. The method according to claim 32,wherein each of the second substrate and the third substrate comprisesat least one selected from the group consisting of polypropylene,polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, polyethylene,and ethylene vinyl acetate.
 45. The method according to claim 34,wherein each of the second substrate and the third substrate comprisesat least one selected from the group consisting of polypropylene,polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, polyethylene,and ethylene vinyl acetate.
 46. The method according to claim 35,wherein each of the second substrate and the third substrate comprisesat least one selected from the group consisting of polypropylene,polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, polyethylene,and ethylene vinyl acetate.
 47. The method according to claim 33,wherein each of the pair of substrates comprises at least one selectedfrom the group consisting of polypropylene, polyester, vinyl, polyvinylfluoride, polyvinyl chloride, polyethylene, and ethylene vinyl acetate.48. The method according to claim 36, wherein each of the pair ofsubstrates comprises at least one selected from the group consisting ofpolypropylene, polyester, vinyl, polyvinyl fluoride, polyvinyl chloride,polyethylene, and ethylene vinyl acetate.
 49. The method according toclaim 31, wherein at least one surface of the second substrate and thethird substrate is coated with an adhesive.
 50. The method according toclaim 32, wherein at least one surface of the second substrate and thethird substrate is coated with an adhesive.
 51. The method according toclaim 34, wherein at least one surface of the second substrate and thethird substrate is coated with an adhesive.
 52. The method according toclaim 35, wherein at least one surface of the second substrate and thethird substrate is coated with an adhesive.
 53. The method according toclaim 33, wherein at least one surface of the pair of substrates iscoated with an adhesive.
 54. The method according to claim 36, whereinat least one surface of the pair of substrates is coated with anadhesive.
 55. The method according to claim 34, wherein the conductivematerial comprises carbon or indium tin oxide.
 56. The method accordingto claim 35, wherein the conductive material comprises carbon or indiumtin oxide.
 57. The method according to claim 36, wherein the conductivematerial comprises carbon or indium tin oxide.
 58. The method accordingto claim 31, wherein the thin film integrated circuits are sealedbetween the second substrate and the third substrate by performing oneof a pressure treatment and a heat treatment.
 59. The method accordingto claim 32, wherein the thin film integrated circuits are sealedbetween the second substrate and the third substrate by performing oneof a pressure treatment and a heat treatment.
 60. The method accordingto claim 34, wherein the thin film integrated circuits are sealedbetween the second substrate and the third substrate by performing oneof a pressure treatment and a heat treatment.
 61. The method accordingto claim 35, wherein the thin film integrated circuits are sealedbetween the second substrate and the third substrate by performing oneof a pressure treatment and a heat treatment.
 62. The method accordingto claim 33, wherein the thin film integrated circuits are sealedbetween the pair of substrates by performing one of a pressure treatmentand a heat treatment.
 63. The method according to claim 36, wherein thethin film integrated circuits are sealed between the pair of substratesby performing one of a pressure treatment and a heat treatment.
 64. Themethod according to claim 31, wherein each of the plurality of chips iscapable of communicating data without contact.
 65. The method accordingto claim 32, wherein each of the plurality of chips is capable ofcommunicating data without contact.
 66. The method according to claim33, wherein each of the plurality of chips is capable of communicatingdata without contact.
 67. The method according to claim 34, wherein eachof the plurality of chips is capable of communicating data withoutcontact.
 68. The method according to claim 35, wherein each of theplurality of chips is capable of communicating data without contact. 69.The method according to claim 36, wherein each of the plurality of chipsis capable of communicating data without contact.
 70. The methodaccording to claim 31, wherein the second substrate and the thirdsubstrate are in contact with each other at a region outside the thinfilm integrated circuit by the step of attaching the second substrate tothe third substrate.
 71. The method according to claim 32, wherein thesecond substrate and the third substrate are in contact with each otherat a region outside the thin film integrated circuit by the step ofattaching the second substrate to the third substrate.
 72. The methodaccording to claim 33, wherein the pair of substrates are in contactwith each other at a region outside the thin film integrated circuit bythe disposing step.
 73. The method according to claim 34, wherein thesecond substrate and the third substrate are in contact with each otherat a region outside the thin film integrated circuit by the step ofattaching the second substrate to the third substrate.
 74. The methodaccording to claim 35, wherein the second substrate and the thirdsubstrate are in contact with each other at a region outside the thinfilm integrated circuit by the step of attaching the second substrate tothe third substrate.
 75. The method according to claim 36, wherein thepair of substrates are in contact with each other at a region outsidethe thin film integrated circuit by the disposing step.